2n5551 datasheet pdf 1n4001

As part of the fairchild semiconductor integration, some of the fairchild orderable part numbers. Product tags other people marked this product with these tags. General purpose plastic rectifier 1n4001 thru 1n4007 vishay general semiconductor features low forward voltage drop low leakage current. Toshiba transistor silicon npn epitaxial type pct process 2sc1815 audio frequency general purpose amplifier applications driver stage amplifier applications high voltage and high current.

Onsemi mplifier transistorsnpn silicon,alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. Vceo 50 v min, ic 150 ma max excellent hfe linearity. 2n5551 transistor pinout, features, equivalent & datasheet. Ordering information note 4 device packaging shipping. Btmapril 20062n5551 mmbt5551npn general purpose amplifierfeatures this device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Free packages are available maximum ratings rating symbol value unit collector. Emitter voltage 2n5550 2n5551 vceo 140 160 vdc collector. Replacing 1n4001 for higher current diodes electrical.

Description third generation power mosfets from vishay provide the. Datasheet search engine for electronic components and semiconductors. For example, parts with lead pb te rminations are not rohscompliant. Pricing and availability on millions of electronic components from digikey electronics. Npn silicon expitaxial planar transistor for general purpose, high voltage amplifier applications, 2n5551 datasheet, 2n5551 circuit, 2n5551 data sheet. To learn more about on semiconductor, please visit our website at. Elektronische bauelemente ss8050 npn silicon general purpose transistor 26oct2009 rev. H utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values such as.

Pdf 2n5551mmbt5551 mmbt5551 2n5551 ot23 2n5551 2n5551b tr 5551 2n5551 sot23 br 5551 2n5551 circuit 2n5551bu br n. November 2007 rev 2 112 12 tip41c tip42c complementary power transistors features complementary pnpnpn devices new enhanced series high switching speed hfe grouping hfe improved linearity applications general purpose circuits audio amplifier power linear and switching description the tip41c is a base island technology npn. This datasheet provides information about parts that are rohscompliant and or parts that are nonrohscompliant. Vishay, disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. Semtech, alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits. Complementary power transistors stmicroelectronics. Base suffix y means hfe 180240 in 2n5551 test condition. Vceo160v high current gain applications telephone switching circuit amplifier ordering information ordering number pin assignment package packing lead free. B1 1 june 2009 2n5551 mmbt5551 npn general purpose amplifier features this device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Its in a family along which includes the 1n4001 through 1n4007 diodes.

Specifications may change in any manner without notice. It also has decent switching characteristics so can amplify lowlevel signals. General purpose plastic rectifier vishay intertechnology. Please see the information tables in this datasheet for details. The 2n5551 is an npn amplifier transistor with an amplification factor of 80 when the collector current is 10ma. You should look at the datasheet for these diodes to determine if you can substitute them safely. Base voltage 2n5550 2n5551 vcbo 160 180 vdc emitter. Ul flammability classification rating 94v0 moisture sensitivity. Free devices maximum ratings rating symbol value unit collector. The 1n4001 diode is considered a general purpose rectifier.

Axial lead solderable per milstd202, method 208 guaranteed. The product status of the devices described in this data sheet may have changed since this data sheet was published. Semtech npn silicon expitaxial planar transistor for general purpose, high voltage amplifier applications,alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. Please consult the most recently issued data sheet before initiating or completing a design. Toshiba transistor silicon npn epitaxial type pct process. This datasheet contains the design specifications for product development.